N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies
from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in 32
volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,
IDQ = 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
ACPR ≤ -58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,
IDQ = 2.0 A
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ -31.3 dBc
• Internally Input and Output Matched for Ease of Use
• Integrated ESD Protection
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.